Real time trigger rate monitoring in a memory sub-system

ABSTRACT

The rate at which reads on a target memory portion initiate error recovery procedures can be monitored in real-time. Trigger rates can be used to perform analysis of a memory sub-system or to implement improvements in the memory sub-system. Trigger rate monitoring can include accessing a count of error recovery initializations for a target memory portion, wherein the count of error recovery initializations corresponds to a number of times a first stage of a multi-stage error recovery process was performed. Trigger rate monitoring can further include accessing a count of read operations corresponding to the target memory portion. The count of error recovery initializations and the count of read operations can be used to compute a trigger rate. The trigger rate, or multiple trigger rates from various times or from various target memory portions, can be used to compute a metric for the memory portion(s).

TECHNICAL FIELD

The present disclosure generally relates to a memory sub-system, andmore specifically, relates to monitoring, in real time, a rate of errorrecovery initializations in relation to a rate of read operations in thememory sub-system.

BACKGROUND

A memory sub-system can be a storage system, such as a solid-state drive(SSD), and can include one or more memory components that store data.The memory components can be, for example, non-volatile memorycomponents and/or volatile memory components. In general, a host systemcan utilize a memory sub-system to store data at the memory componentsand to retrieve data from the memory components.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure will be understood more fully from the detaileddescription given below and from the accompanying drawings of variousembodiments of the disclosure.

FIG. 1 illustrates an example computing environment that includes amemory sub-system in accordance with some embodiments of the presentdisclosure.

FIG. 2 is a flow diagram of generating a trigger rate log and using thetrigger rate log to analyze or improve a memory sub-system in accordancewith some embodiments of the present disclosure.

FIG. 3 is a conceptual diagram of example graphed data points from atrigger rate log in accordance with some embodiments of the presentdisclosure.

FIG. 4 is a block diagram of an example computer system in whichembodiments of the present disclosure may operate.

DETAILED DESCRIPTION

Aspects of the present disclosure are directed to real time monitoringof trigger rates in a memory sub-system. Additional aspects of thepresent disclosure are directed to using trigger rates to performanalysis of a memory sub-system or to implement improvements in thememory sub-system. A memory sub-system is also hereinafter referred toas a “memory device.” An example of a memory sub-system is a storagesystem, such as a solid-state drive (SSD). In some embodiments, thememory sub-system is a hybrid memory/storage sub-system. In variousimplementations, a memory sub-system can include non-volatile memorydevices, such as, for example, negative-and (NAND). In general, a hostsystem can utilize a memory sub-system that includes one or more memorycomponents. The host system can provide data to be stored at the memorysub-system and can request data to be retrieved from the memorysub-system. A “trigger rate” is a rate at which a portion of a memorysystem initiates (e.g. triggers) error recovery procedures.

Existing approaches to obtaining trigger rate data for a memorysub-system involve executing a test suite against the memory sub-systemthat performs test read operations and monitors for error recoveryinitiations. However, trigger rate data obtained in this fashion cannotbe generated at small granularities, such as at the die level, and isnot been available on a real-time basis. In view of these limitations,existing approaches are unable to use this minimal trigger rate data toanalyze portions of a memory device and or to effectively adjust aspectsof the memory device.

Aspects of the present disclosure address the above and otherdeficiencies by A) implementing real-time trigger rate monitoring and B)using the monitored trigger rate data to generate new metrics foranalyzing a memory sub-system and for adjusting the memory sub-systembased on the monitored trigger rate data. A memory sub-system canimplement trigger rate monitoring by accessing a count of error recoveryprocedure initializations tracked for a memory portion and accessing acount of read events for that memory portion. The memory sub-system canbe configured to track these error recovery procedures and readoperations. In some implementations, the tracking can be for memoryportions at any of various granularities, such as at a page level, blocklevel, plane level, die level, across multiple die, in a whole memorydevice, or in multiple memory devices. In some implementations, theerror recovery and read operation tracking can include time meta-dataand the accessing can be for a given time window. The memory sub-systemcan use the count of error recovery initializations and the count ofread events to compute a trigger rage for the memory portion, e.g. bydividing the count of error recovery initializations by the count ofread events. In some implementations, trigger rates can be computedon-demand or periodically, e.g. when a timer reaches a threshold.Generated trigger rates can be saved to a log. As used herein, a “log”can be any storage system that stores one or more trigger rates. In someimplementations, trigger rates stored in a log can be stored withvarious meta data such as a timestamp, die temperature, or other tagrelating to the generated trigger rate or a state of the memory portionthe trigger rate is for.

The memory portion can use the log of one or more trigger rates tocompute a metric for the memory portion. This metric can be used toperform various analyses for the memory portion or to adjustcharacteristics of the memory device. In some implementations, thesystem can determine trends in error triggering, e.g. based on patterns,a maximum, minimum, or slope of points in the trigger rate log. In someimplementations, the system can correlate error triggering trends tocharacteristics of the memory portion, such as die temperature or lifestage of the memory device. For example, the processing logic can splitthe multiple trigger rates from the log into groups based on timestampsor total read counts leading up to each trigger rate. Each group cancorrespond to a stage in the life cycle of a memory device. Theprocessing logic can then identify a trend for one or more of thegroups, thus defining expected performances for memory portions atvarious points in their life cycles. In some implementations, the systemcan use the trigger rate to perform failure analysis by determining acharacteristic of trigger rates leading up to a failure event orcomparing such trigger rates with earlier trigger rates from the log. Insome implementations, the system can identify poor performing memoryportions that are causing bottlenecks and set them to be disabled orless frequently used. In some implementations, the system can set abackground scan frequency based on one or more trigger rates or triggerrate trends. In some implementations, the system can adjust otherconfigurations of for the memory device or memory portion based on thetrigger rate metrics, such as clock frequency, power levels, etc.

FIG. 1 illustrates an example computing environment 100 that includes amemory sub-system 110 in accordance with some embodiments of the presentdisclosure. The memory sub-system 110 can include media, such as memorycomponents 112A to 112N. The memory components 112A to 112N can bevolatile memory components, non-volatile memory components, or acombination of such. In some embodiments, the memory sub-system is astorage system. An example of a storage system is a SSD. In someembodiments, the memory sub-system 110 is a hybrid memory/storagesub-system. In general, the computing environment 100 can include a hostsystem 120 that uses the memory sub-system 110. For example, the hostsystem 120 can write data to the memory sub-system 110 and read datafrom the memory sub-system 110.

The host system 120 can be a computing device such as a desktopcomputer, laptop computer, network server, mobile device, or suchcomputing device that includes a memory and a processing device. Thehost system 120 can include or be coupled to the memory sub-system 110so that the host system 120 can read data from or write data to thememory sub-system 110. The host system 120 can be coupled to the memorysub-system 110 via a physical host interface. As used herein, “coupledto” generally refers to a connection between components, which can be anindirect communicative connection or direct communicative connection(e.g., without intervening components), whether wired or wireless,including connections such as electrical, optical, magnetic, etc.Examples of a physical host interface include, but are not limited to, aserial advanced technology attachment (SATA) interface, a peripheralcomponent interconnect express (PCIe) interface, universal serial bus(USB) interface, Fibre Channel, Serial Attached SCSI (SAS), etc. Thephysical host interface can be used to transmit data between the hostsystem 120 and the memory sub-system 110. The host system 120 canfurther utilize an NVM Express (NVMe) interface to access the memorycomponents 112A to 112N when the memory sub-system 110 is coupled withthe host system 120 by the PCIe interface. The physical host interfacecan provide an interface for passing control, address, data, and othersignals between the memory sub-system 110 and the host system 120.

The memory components 112A to 112N can include any combination of thedifferent types of non-volatile memory components and/or volatile memorycomponents. An example of non-volatile memory components includes anegative-and (NAND) type flash memory. Each of the memory components112A to 112N can include one or more arrays of memory cells such assingle level cells (SLCs) or multi-level cells (MLCs) (e.g., triplelevel cells (TLCs) or quad-level cells (QLCs)). In some embodiments, aparticular memory component can include both an SLC portion and a MLCportion of memory cells. Each of the memory cells can store one or morebits of data (e.g., data blocks) used by the host system 120. Althoughnon-volatile memory components such as NAND type flash memory aredescribed, the memory components 112A to 112N can be based on any othertype of memory such as a volatile memory. In some embodiments, thememory components 112A to 112N can be, but are not limited to, randomaccess memory (RAM), read-only memory (ROM), dynamic random accessmemory (DRAM), synchronous dynamic random access memory (SDRAM), phasechange memory (PCM), magneto random access memory (MRAM), negative-or(NOR) flash memory, electrically erasable programmable read-only memory(EEPROM), and a cross-point array of non-volatile memory cells. Across-point array of non-volatile memory can perform bit storage basedon a change of bulk resistance, in conjunction with a stackablecross-gridded data access array. Additionally, in contrast to manyflash-based memories, cross-point non-volatile memory can perform awrite in-place operation, where a non-volatile memory cell can beprogrammed without the non-volatile memory cell being previously erased.Furthermore, the memory cells of the memory components 112A to 112N canbe grouped as memory pages or data blocks that can refer to a unit ofthe memory component used to store data.

The memory sub-system controller 115 (hereinafter referred to as“controller”) can communicate with the memory components 112A to 112N toperform operations such as reading data, writing data, or erasing dataat the memory components 112A to 112N and other such operations. Thecontroller 115 can include hardware such as one or more integratedcircuits and/or discrete components, a buffer memory, or a combinationthereof. The controller 115 can be a microcontroller, special purposelogic circuitry (e.g., a field programmable gate array (FPGA), anapplication specific integrated circuit (ASIC), etc.), or other suitableprocessor. The controller 115 can include a processor (processingdevice) 117 configured to execute instructions stored in local memory119. In the illustrated example, the local memory 119 of the controller115 includes an embedded memory configured to store instructions forperforming various processes, operations, logic flows, and routines thatcontrol operation of the memory sub-system 110, including handlingcommunications between the memory sub-system 110 and the host system120. In some embodiments, the local memory 119 can include memoryregisters storing memory pointers, fetched data, etc. The local memory119 can also include read-only memory (ROM) for storing micro-code.While the example memory sub-system 110 in FIG. 1 has been illustratedas including the controller 115, in another embodiment of the presentdisclosure, a memory sub-system 110 may not include a controller 115,and may instead rely upon external control (e.g., provided by anexternal host, or by a processor or controller separate from the memorysub-system).

In general, the controller 115 can receive commands or operations fromthe host system 120 and can convert the commands or operations intoinstructions or appropriate commands to achieve the desired access tothe memory components 112A to 112N. The controller 115 can beresponsible for other operations such as wear leveling operations,garbage collection operations, error detection and error-correcting code(ECC) operations, encryption operations, caching operations, and addresstranslations between a logical block address and a physical blockaddress that are associated with the memory components 112A to 112N. Thecontroller 115 can further include host interface circuitry tocommunicate with the host system 120 via the physical host interface.The host interface circuitry can convert the commands received from thehost system into command instructions to access the memory components112A to 112N as well as convert responses associated with the memorycomponents 112A to 112N into information for the host system 120.

The memory sub-system 110 can also include additional circuitry orcomponents that are not illustrated. In some embodiments, the memorysub-system 110 can include a cache or buffer (e.g., DRAM) and addresscircuitry (e.g., a row decoder and a column decoder) that can receive anaddress from the controller 115 and decode the address to access thememory components 112A to 112N.

The memory sub-system 110 includes a trigger rate monitor 113 that canbe used to generate, in real-time, trigger rates for a target memoryportion and to use trigger rates to make determinations about a memorydevice and to adjust characteristics of a memory device. In someembodiments, the controller 115 includes at least a portion of thetrigger rate monitor 113. For example, the controller 115 can include aprocessor 117 (processing device) configured to execute instructionsstored in local memory 119 for performing the operations describedherein. In some embodiments, the trigger rate monitor 113 is part of thehost system 110, an application, or an operating system.

The trigger rate monitor 113 can access counts of error recovery flowinitializations and counts of read operations for portions of the memorycomponents 112A to 112N of the memory sub-system 110. The trigger ratemonitor 113 can determine trigger rates for each of the portions of thememory components 112A to 112N based on one or more operations that usethe counts of error recovery flow initializations and counts of readoperations, e.g. by dividing an error recovery flow initialization countby a read operation count. The trigger rate monitor 113 can performthese data accesses and trigger rate computations periodically or upon auser request such that the trigger rate is available in real time. Thetrigger rate monitor 113 can store a log including the trigger rates.The trigger rate monitor 113 can use the computed trigger rate ortrigger rate log in various ways such as: measuring quality of a memorydevice, determining trigger rate trends at different stages of a memorydevice's life cycle, setting parameters of a memory device, identifyingportions of a memory device that are bottlenecks, or performing analysesin response to failure conditions. Further details with regards to theoperations of the trigger rate monitor 113 are described below.

FIG. 2 is a flow diagram of an example method 200 for generating atrigger rate log and using the trigger rate log to improve memorysub-systems in accordance with some implementations of the presenttechnology. The processing logic can include hardware (e.g., processingdevice, circuitry, dedicated logic, programmable logic, microcode,hardware of a device, integrated circuit, etc.), software (e.g.,instructions run or executed on a processing device), or a combinationthereof can perform method 200. In some embodiments, the trigger ratemonitor 113 of FIG. 1 can perform the method 200. Although shown in aparticular sequence or order, unless otherwise specified, the order ofthe processes can be modified. Thus, the illustrated embodiments shouldbe understood only as examples, and the illustrated processes can beperformed in a different order, and some processes can be performed inparallel. Additionally, one or more processes can be omitted in variousembodiments. Thus, not all processes are required in every embodiment.Other process flows are possible.

In some implementations, a timer reaching a threshold (e.g., countingdown to 0 from a predetermined value, or counting up to a predeterminedvalue) can initiate the processing logic for method 200. Repeated usesof the timer can cause the processing logic to generate trigger ratevalues at successive intervals. When these trigger rate values arestored in a log, they can be used to determine metrics or trends for amemory portion. In some implementations, a request for the currenttrigger rate can initiate the processing logic for method 200. Forexample, the request can be from a user using a vendor specific (VS)command. This provides a trigger rate that reflects the most recentoperations performed by a memory portion. In various implementations,the processing logic can generate trigger rates for differentgranularities of target memory portions, such as at a page level, blocklevel, plane level, die level, across sections of multiple die, in awhole memory device, or in multiple memory devices.

At block 204, the processing logic can access a count of error recoveryinitializations performed for a target memory portion. In someimplementations, this count can be read from an error recovery listtable. In some implementations, this can be a count of the number oftimes that a first stage, of a multi-stage error recovery process, wasperformed. In some various implementations, the count of error recoveryinitializations can be for the life of the memory portion, since thememory portion was powered on, or for another specified time window. Forexample, error recovery initializations can be associated withtimestamps and a request for a trigger rate for a particular die canspecify a time window. In responding to this request, the processinglogic can access an error recovery list table that stores records, withtimestamps, of error procedures for the particular die and can count theinitializations with timestamps within the time window.

At block 206, the processing logic can access a count of read operationsfor the target memory portion. In some implementations, this count canbe obtained from a data store established to track read operations atthe level of granularity corresponding to memory portions used by theprocessing logic. For example, where target memory portions are die, adata store can track read operations or a count of read operations foreach die of a memory device. In some implementations, the tracked readoperations can be read operations of a certain type, such as code wordreads. For example, a single read may retrieve two code words, but thiscan be counted as two in the count of read operations. In someimplementations, the data store can store a total count of readoperations for memory portions. This implementation only uses a singleinteger to track read operations, reducing the amount of storage spacerequired. In some implementations, individual read operations can betracked with timestamps. While taking additional storage space, thisimplementation maximizes the detail of data that can be retrieved,allowing trigger rates to be determined for any specific time interval.In some implementations, read operations can be tracked for specifiedintervals of time. For example, a count of read operations can be savedfor each fifteen second interval. This hybrid approach limits the amountof storage space required while allowing for trigger rate requests tospecify time windows according to the time interval size.

At block 208, the processing logic can compute a trigger rate for thetarget memory portion based on the count of error recoveryinitializations from block 204 and the count of read operations fromblock 206. In some implementations, the trigger rate can be computed bydividing the count of error recovery initializations from block 204 bythe count of read operations from block 206. In some implementations,the processing logic can save the trigger rate from block 208 to a log.In some implementations, instead of saving the trigger rate to a log,the processing logic can return the computed trigger rate, e.g. as aresponse to a request for a current trigger rate. In someimplementations, the trigger rate can be saved or returned withmeta-data such as: a timestamp, a temperature of the target memoryportion, or other characteristics of the memory portion or memory devicethat may be relevant to analyzing trends in trigger rates or selectinghow best to respond to trigger rates or trigger rate trends. In someimplementations, the log can also store values from previous triggerrate determination for the target memory portion or for other targetmemory portions of the memory device. In some implementations, one ormore trigger rates from the log can be retrieved in response to a VScommand.

At block 212, the processing logic can use trigger rate log values tocompute a metric for the target memory portion or for the deviceincluding the target memory portion. The processing logic can use thismetric to perform various analyses for the memory portion or to adjustcharacteristics of the memory device containing the memory portion. Insome implementations, the system can determine a trend from the log,such a section of trigger rate data points that form a slope, a sectionof data points that form a peak or the point that is a maximum, or asection of data points that form a valley or the point that is aminimum. In some implementations, such determinations can be correlatedto a cause, such as an amount of time the memory device has been activeor number of read events that the memory device has performed. Suchcorrelations can indicate expected error rates at points in the lifecycle of the memory device. In some implementations, thesedeterminations can be correlated to meta-data associated with the pointsused in the determination to identify a cause. Such correlations canindicate how memory device or memory portion characteristics affecterror rates. For example, die temperature meta-data can be used todetermine how die temperatures affect error rates.

In some implementations, the processing logic use the trigger rate logto perform failure analysis by determining a characteristic of triggerrates leading up to a failure event or comparing such trigger rates withearlier trigger rates from the log. In some implementations, theprocessing logic can identify poor performing memory portions (e.g.memory portions with high trigger rates) that are causing bottlenecksand set them to be disabled or less frequently used. For example, theprocessing logic can identify a bottleneck by comparing the metric to athreshold, such as a threshold specifying minimum performancerequirements or defining a lower preforming percentage of memoryportions, e.g. identify bottlenecks as the 5% of die with the worsttrigger rates. In some implementations, the processing logic can set abackground scan frequency based on one or more trigger rates or triggerrate trends. For example, a function created using statistical data thatmaps trigger rates to background scan frequencies to optimizeperformance can be applied to the metric. In some implementations, theprocessing logic can adjust other configurations of for the memorydevice or memory portion, such as clock frequency, power levels, etc.,based on the trigger rate metric.

FIG. 3 is a graph 300 of example data points from a trigger rate log inaccordance with some embodiments of the present disclosure, for a targetmemory portion that is a die. In graph 300, the trigger rates are loggedwith timestamps and are graphed with time on the x-axis. In graph 300,trigger rate 302 can be identified as a maximum and a slope of a linefit to trigger rates 304-308 can be identified as metrics for the targetdie. These metrics can be correlated with temperature data correspondingto trigger rates 302-308 to determine how significant a temperaturechange is needed in the target die to transition from an unacceptablyhigh trigger rate to a trigger rate that does not cause the die to fallbelow performance requirements.

FIG. 4 illustrates an example machine of a computer system 400 withinwhich a set of instructions, for causing the machine to perform any oneor more of the methodologies discussed herein, can be executed. In someembodiments, the computer system 400 can correspond to a host system(e.g., the host system 120 of FIG. 1) that includes, is coupled to, orutilizes a memory sub-system (e.g., the memory sub-system 110 of FIG. 1)or can be used to perform the operations of a controller (e.g., toexecute an operating system to perform operations corresponding to thetrigger rate monitor 113 of FIG. 1). In alternative embodiments, themachine can be connected (e.g., networked) to other machines in a LAN,an intranet, an extranet, and/or the Internet. The machine can operatein the capacity of a server or a client machine in client-server networkenvironment, as a peer machine in a peer-to-peer (or distributed)network environment, or as a server or a client machine in a cloudcomputing infrastructure or environment.

The machine can be a personal computer (PC), a tablet PC, a set-top box(STB), a Personal Digital Assistant (PDA), a cellular telephone, a webappliance, a server, a network router, a switch or bridge, or anymachine capable of executing a set of instructions (sequential orotherwise) that specify actions to be taken by that machine. Further,while a single machine is illustrated, the term “machine” shall also betaken to include any collection of machines that individually or jointlyexecute a set (or multiple sets) of instructions to perform any one ormore of the methodologies discussed herein.

The example computer system 400 includes a processing device 402, a mainmemory 404 (e.g., read-only memory (ROM), flash memory, dynamic randomaccess memory (DRAM) such as synchronous DRAM (SDRAM) or Rambus DRAM(RDRAM), etc.), a static memory 406 (e.g., flash memory, static randomaccess memory (SRAM), etc.), and a data storage system 418, whichcommunicate with each other via a bus 430.

Processing device 402 represents one or more general-purpose processingdevices such as a microprocessor, a central processing unit, or thelike. More particularly, the processing device can be a complexinstruction set computing (CISC) microprocessor, reduced instruction setcomputing (RISC) microprocessor, very long instruction word (VLIW)microprocessor, or a processor implementing other instruction sets, orprocessors implementing a combination of instruction sets. Processingdevice 402 can also be one or more special-purpose processing devicessuch as an application specific integrated circuit (ASIC), a fieldprogrammable gate array (FPGA), a digital signal processor (DSP),network processor, or the like. The processing device 402 is configuredto execute instructions 426 for performing the operations and stepsdiscussed herein. The computer system 400 can further include a networkinterface device 408 to communicate over the network 420.

The data storage system 418 can include a machine-readable storagemedium 424 (also known as a computer-readable medium) on which is storedone or more sets of instructions 426 or software embodying any one ormore of the methodologies or functions described herein. Theinstructions 426 can also reside, completely or at least partially,within the main memory 404 and/or within the processing device 402during execution thereof by the computer system 400, the main memory 404and the processing device 402 also constituting machine-readable storagemedia. The machine-readable storage medium 424, data storage system 418,and/or main memory 404 can correspond to the memory sub-system 110 ofFIG. 1.

In one embodiment, the instructions 426 include instructions toimplement functionality for monitoring and acting on trigger rate data(e.g., the trigger rate monitor 113 of FIG. 1). While themachine-readable storage medium 424 is shown in an example embodiment tobe a single medium, the term “machine-readable storage medium” should betaken to include a single medium or multiple media that store the one ormore sets of instructions. The term “machine-readable storage medium”shall also be taken to include any medium that is capable of storing orencoding a set of instructions for execution by the machine and thatcause the machine to perform any one or more of the methodologies of thepresent disclosure. The term “machine-readable storage medium” shallaccordingly be taken to include, but not be limited to, solid-statememories, optical media, and magnetic media.

Some portions of the preceding detailed descriptions have been presentedin terms of algorithms and symbolic representations of operations ondata bits within a computer memory. These algorithmic descriptions andrepresentations are the ways used by those skilled in the dataprocessing arts to most effectively convey the substance of their workto others skilled in the art. An algorithm is here, and generally,conceived to be a self-consistent sequence of operations leading to adesired result. The operations are those requiring physicalmanipulations of physical quantities. Usually, though not necessarily,these quantities take the form of electrical or magnetic signals capableof being stored, combined, compared, and otherwise manipulated. It hasproven convenient at times, principally for reasons of common usage, torefer to these signals as bits, values, elements, symbols, characters,terms, numbers, or the like.

It should be borne in mind, however, that all of these and similar termsare to be associated with the appropriate physical quantities and aremerely convenient labels applied to these quantities. The presentdisclosure can refer to the action and processes of a computer system,or similar electronic computing device, that manipulates and transformsdata represented as physical (electronic) quantities within the computersystem's registers and memories into other data similarly represented asphysical quantities within the computer system memories or registers orother such information storage systems.

The present disclosure also relates to an apparatus for performing theoperations herein. This apparatus can be specially constructed for theintended purposes, or it can include a general purpose computerselectively activated or reconfigured by a computer program stored inthe computer. Such a computer program can be stored in a computerreadable storage medium, such as, but not limited to, any type of diskincluding floppy disks, optical disks, CD-ROMs, and magnetic-opticaldisks, read-only memories (ROMs), random access memories (RAMs), EPROMs,EEPROMs, magnetic or optical cards, or any type of media suitable forstoring electronic instructions, each coupled to a computer system bus.

The algorithms and displays presented herein are not inherently relatedto any particular computer or other apparatus. Various general purposesystems can be used with programs in accordance with the teachingsherein, or it can prove convenient to construct a more specializedapparatus to perform the method. The structure for a variety of thesesystems will appear as set forth in the description below. In addition,the present disclosure is not described with reference to any particularprogramming language. It will be appreciated that a variety ofprogramming languages can be used to implement the teachings of thedisclosure as described herein.

The present disclosure can be provided as a computer program product, orsoftware, that can include a machine-readable medium having storedthereon instructions, which can be used to program a computer system (orother electronic devices) to perform a process according to the presentdisclosure. A machine-readable medium includes any mechanism for storinginformation in a form readable by a machine (e.g., a computer). In someembodiments, a machine-readable (e.g., computer-readable) mediumincludes a machine (e.g., a computer) readable storage medium such as aread only memory (“ROM”), random access memory (“RAM”), magnetic diskstorage media, optical storage media, flash memory components, etc.

In the foregoing specification, embodiments of the disclosure have beendescribed with reference to specific example embodiments thereof. Itwill be evident that various modifications can be made thereto withoutdeparting from the broader spirit and scope of embodiments of thedisclosure as set forth in the following claims. The specification anddrawings are, accordingly, to be regarded in an illustrative senserather than a restrictive sense.

Those skilled in the art will appreciate that the components and blocksillustrated in FIGS. 1-4 described above, may be altered in a variety ofways. For example, the order of the logic may be rearranged, substepsmay be performed in parallel, illustrated logic may be omitted, otherlogic may be included, etc. In some implementations, one or more of thecomponents described above can execute one or more of the processesdescribed below.

Reference in this specification to “implementations” (e.g. “someimplementations,” “various implementations,” “one implementation,” “animplementation,” etc.) means that a particular feature, structure, orcharacteristic described in connection with the implementation isincluded in at least one implementation of the disclosure. Theappearances of these phrases in various places in the specification arenot necessarily all referring to the same implementation, nor areseparate or alternative implementations mutually exclusive of otherimplementations. Moreover, various features are described which may beexhibited by some implementations and not by others. Similarly, variousrequirements are described which may be requirements for someimplementations but not for other implementations.

As used herein, being above a threshold means that a value for an itemunder comparison is above a specified other value, that an item undercomparison is among a certain specified number of items with the largestvalue, or that an item under comparison has a value within a specifiedtop percentage value. As used herein, being below a threshold means thata value for an item under comparison is below a specified other value,that an item under comparison is among a certain specified number ofitems with the smallest value, or that an item under comparison has avalue within a specified bottom percentage value. As used herein, beingwithin a threshold means that a value for an item under comparison isbetween two specified other values, that an item under comparison isamong a middle specified number of items, or that an item undercomparison has a value within a middle specified percentage range.Relative terms, such as high or unimportant, when not otherwise defined,can be understood as assigning a value and determining how that valuecompares to an established threshold. For example, the phrase “selectinga fast connection” can be understood to mean selecting a connection thathas a value assigned corresponding to its connection speed that is abovea threshold.

As used herein, the word “or” refers to any possible permutation of aset of items. For example, the phrase “A, B, or C” refers to at leastone of A, B, C, or any combination thereof, such as any of: A; B; C; Aand B; A and C; B and C; A, B, and C; or multiple of any item such as Aand A; B, B, and C; A, A, B, C, and C; etc.

Although the subject matter has been described in language specific tostructural features and/or methodological acts, it is to be understoodthat the subject matter defined in the appended claims is notnecessarily limited to the specific features or acts described above.Specific embodiments and implementations have been described herein forpurposes of illustration, but various modifications can be made withoutdeviating from the scope of the embodiments and implementations. Thespecific features and acts described above are disclosed as exampleforms of implementing the claims that follow. Accordingly, theembodiments and implementations are not limited except as by theappended claims.

Any patents, patent applications, and other references noted above areincorporated herein by reference. Aspects can be modified, if necessary,to employ the systems, functions, and concepts of the various referencesdescribed above to provide yet further implementations. If statements orsubject matter in a document incorporated by reference conflicts withstatements or subject matter of this application, then this applicationshall control.

I claim:
 1. A method comprising: accessing a count of error recoveryinitializations for a target memory portion, wherein the count of errorrecovery initializations corresponds to a number of times a first stageof a multi-stage error recovery process was performed; accessing a countof read operations corresponding to the target memory portion; computinga trigger rate for the target memory portion based at least in part onthe count of error recovery initializations and the count of readoperations; and saving the trigger rate for the target memory portion toa trigger rate log, wherein the target memory portion is a first targetmemory portion; and wherein the method further comprises: accessingmultiple trigger rates stored in the trigger rate log; identifying oneor more first trends for the multiple trigger rates; comparing the firsttrends to one or more second trends identified in relation to a secondtarget memory portion; and adjusting the first memory portion or thesecond memory portion based on the comparison.
 2. The method of claim 1,wherein the method is initiated in response to a start condition fortrigger rate sampling comprising a timer reaching a threshold.
 3. Themethod of claim 1, wherein the target memory portion is a die.
 4. Themethod of claim 3, wherein accessing the count of read operationscomprises accessing a counter corresponding to a number of code wordreads on a per-die basis.
 5. The method of claim 1, wherein computingthe trigger rate comprises dividing the count of error recoveryinitializations by the count of read operations.
 6. The method of claim1, wherein the trigger rate is saved to the trigger rate log inassociation with meta-data specifying a timestamp or a temperature ofthe target memory portion.
 7. The method of claim 1, further comprisingcomputing a metric for the target memory portion based at least in parton the computed trigger rate and one or more previously-computed triggerrates for the target memory portion, wherein computing the metric forthe target memory portion comprises one or more of computing: a maximumtrigger rate, a minimum trigger rate, or a slope of a function fit tomultiple trigger rates from among the group comprising both the computedtrigger rate and the previously-computed trigger rates.
 8. The method ofclaim 7 further comprising setting a frequency of a background scan forthe memory portion based on the computed metric.
 9. A non-transitorycomputer-readable storage medium comprising instructions that, whenexecuted by one or more processing devices, cause the one or moreprocessing devices to: identify a start condition for trigger ratesampling; access a count of error recovery initializations for a targetmemory portion; access a count of read operations corresponding to thetarget memory portion; compute a trigger rate for the target memoryportion based at least in part on the count of error recoveryinitializations and the count of read operations; and save the triggerrate for the target memory portion to a trigger rate log, wherein thetarget memory portion is a first target memory portion; and wherein theoperations further comprise: accessing multiple trigger rates stored inthe trigger rate log; identifying one or more first trends for themultiple trigger rates; comparing the first trends to one or more secondtrends identified in relation to a second target memory portion; andadjusting the first memory portion or the second memory portion based onthe comparison.
 10. The computer-readable storage medium of claim 9,wherein the start condition for trigger rate sampling is receiving acommand from a user.
 11. The computer-readable storage medium of claim9, wherein the operations further comprise: computing a metric based atleast in part on the multiple trigger rates; comparing the metric to athreshold; and based on the comparison, identifying the target memoryportion as being a bottleneck in a memory device.
 12. Thecomputer-readable storage medium of claim 9, wherein the count of errorrecovery initializations corresponds to a number of times a first stageof a multi-state error recovery process was performed.
 13. Thecomputer-readable storage medium of claim 9, wherein the operationsfurther comprise: determining that the target memory portion failed andin response: computing a metric that compares trigger rates earlier inthe trigger rate log to those leading up to the identified failure. 14.The computer-readable storage medium of claim 13, wherein the operationsfurther comprise setting a frequency of a background scan for the targetmemory portion based on the computed metric.
 15. A system comprising: amemory component; and a processing device, operatively coupled with thememory component, configured to: access a count of error recoveryinitializations for a target memory portion of the memory device; accessa count of read operations corresponding to the target memory portion;compute a trigger rate for the target memory portion based at least inpart on the count of error recovery initializations and the count ofread operations; and save the trigger rate for the target memory portionto a trigger rate log, wherein the target memory portion is a firsttarget memory portion; and wherein the processing device is furtherconfigured to: access multiple trigger rates stored in the trigger ratelog; identify one or more first trends for the multiple trigger rates;compare the first trends to one or more second trends identified inrelation to a second target memory portion; and adjust the first memoryportion or the second memory portion based on the comparison.
 16. Thesystem of claim 15, wherein the count of read operations is a count ofcode word read operations.
 17. The system of claim 15, wherein accessingthe count of error recovery initializations comprises accessing a countof error recovery initializations within a specified timeframe; andwherein accessing the count of read operations comprises accessing acount of code word reads within the specified timeframe.
 18. The systemof claim 15, wherein the processing device is further configured to:divide the multiple trigger rates into groups based on timestampsassociated with each trigger rate; and identify a trend for each of oneor more of the groups of the trigger rates.
 19. The system of claim 15,wherein the count of error recovery initializations corresponds to anumber of times a first stage of a multi-stage error recovery processwas performed.